In order to study the treatment technique used in Chu style Ge having patterns from the Eastern Zhou Dynasty, metallographic microscope, scanning electron microscopy (SEM), Energy Dispersive Spectroscopy (EDS) and Electron Back Scatter Diffraction (EBSD) were used to examine the composition, microstructure, phase constitution and manufacture techniques of patterns in the Chu style Ge collection from Shanghai Museum. It was found that the thickness of high tin content layers of Chu style Ge is not uniform, although most of the layers are around 10 micrometers thick. In some areas the high tin layer are composed of 4 different phases: η phase, ε phase, δ phase, and (α+δ) phase. No obvious boundary was observed between the high tin layer and its substrate. Based on previous research on high tin techniques, it was found that patterns of the Chu style Ge share the same characteristics as technique as those seen in other areas, namely that they were made by hot tinning. However, the Chu style Ge have their own distinct regional tinning control techniques.